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| Si4390DY New Product Vishay Siliconix N-Channel Qg, Fast Switching WFETt FEATURES PRODUCT SUMMARY VDS (V) 30 D Extremely Low Qgd WFET Technology for Switching Losses D TrenchFETr Power MOSFET ID (A) 12.5 10.5 rDS(on) (W) 0.0095 @ VGS = 10 V 0.0135 @ VGS = 4.5 V APPLICATIONS D High-Side DC/DC Conversion - Notebook - Server D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4390DY SI4390DY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 12.5 Steady State Unit V 8.5 6.8 20 A ID IDM IS PD TJ, Tstg 10 2.7 3.0 1.9 -55 to 150 1.3 1.4 0.9 A W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72150 S-03920--Rev. B, 19-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 32 68 15 Maximum 42 90 20 Unit _C/W C/W 1 Si4390DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 12.5 A VGS = 4.5 V, ID = 10.5 A VDS = 15 V, ID = 12.5 A IS = 2.7 A, VGS = 0 V 30 0.0075 0.0105 38 0.7 1.1 0.0095 0.0135 S V 0.8 2.8 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 12.5 A 10 3.5 2.1 0.8 16 6 43 14 35 30 12 70 25 60 ns W 15 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 3V 30 20 20 TC = 125_C 10 25_C -55_C 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72150 S-03920--Rev. B, 19-May-03 www.vishay.com 2 Si4390DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) - On-Resistance ( W ) 1800 Ciss C - Capacitance (pF) 0.024 1500 Vishay Siliconix Capacitance 1200 0.018 VGS = 4.5 V 0.012 VGS = 10 V 0.006 900 Coss 600 Crss 300 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 12.5 A 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 12.5 A 4 r DS(on) - On-Resistance ( W) (Normalized) 6 9 12 15 5 1.6 1.4 3 1.2 2 1.0 1 0.8 0 0 3 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.040 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.032 0.024 ID = 12.5 A 1 TJ = 25_C 0.016 0.008 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72150 S-03920--Rev. B, 19-May-03 www.vishay.com 3 Si4390DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 -0.0 -0.2 -0.4 40 -0.6 -0.8 -50 0 0.001 ID = 250 mA Power (W) 120 200 Single Pulse Power 160 V GS(th) Variance (V) 80 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 1 ms 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68_C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72150 S-03920--Rev. B, 19-May-03 Si4390DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72150 S-03920--Rev. B, 19-May-03 www.vishay.com 5 |
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